Mariana Duarte do Cortinhal, MSc in Micro and Nanotechnology Engineering from NOVA University Lisbon, in 2021, presenting
her Master Thesis "Study of atomic layer deposition of aluminium oxide and tantalum oxide multilayer gate dielectrics for
low-temperature IGZO thin-film transistors", under the supervision of Professor Pedro Barquinha. As a result of her thesis
work, she was able to present a poster at the 2021 NanoPT Conference. Since then, she has been working as a Research fellow
at CENIMAT|i3N, mainly in the Clean Room at CEMOP. During this time, she has solidified her knowledge of atomic layer deposition,
by overseeing two master thesis students, one focused on the study and optimization of ZnO an Al-doped ZnO ALD, and the other
student focused on the optimization of aluminium oxide and tantalum oxide multilayer gate dielectrics for Radiation-sensitive
Oxide semiconductor Field Effect Transistors. During this time she has also started to focus on the growth of ZnO nanowires
through hydrothermal synthesis, and started to work on Gate-all-around thin film transistor architectures. She had previous
clean room experience from an internship in 2018, "Production and Electrical Characterization of Oxide Semiconductors Based
Transparent and Flexible Circuits", also under the supervision of Professor Pedro Barquinha. During her MSc, she was part
of the Nanu (Nanotechnology Association) at Nova School of Science and Technology, as human resources' department director,
from 2017 until 2021. She also voluntered for Expo-FCT, from 2016 to 2018, an anual expo organized by Nova School of Science
and Technology. In her spare time, she enjoys playing the piano, for which she has been awarded 2 awards, Initial and First
Level Piano - With Distinction from Trinity Guildhall (now Trinity College London).
Campus da FCT Quinta da Torre
(+351) 21 294 8562
cenimat.secretariado@fct.unl.ptThis work is funded by national funds through FCT – Fundação para a Ciência e a Tecnologia, I.P., under project UID/50025 and the Associated Laboratory I3N – LA/P/0037/2020.